Kelvin test structure for measuring contact resistance of shallow junctions

被引：0
|
作者：
Nanver, LK [1 ]
Goudena, EJG [1 ]
Slabbekoorn, J [1 ]
机构：
[1] DELFT UNIV TECHNOL,DIMES IC PROC RES SECTOR,NL-2600 GB DELFT,NETHERLANDS
来源：
ICMTS 1996 - 1996 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, PROCEEDINGS | 1996年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：241 / 245
页数：5
相关论文
共 50 条
  • [31] CONTACT RESISTIVITIES OF AL AND TI ON SI MEASURED BY A SELF-ALIGNED VERTICAL KELVIN TEST RESISTOR STRUCTURE
    WEN, LY
    TAN, FL
    CHUNG, LL
    SOLID-STATE ELECTRONICS, 1989, 32 (11) : 997 - 1001
  • [32] Specific contact resistivity of Al-NiSi contacts using Cross Kelvin Resistor test structure chains
    Holland, AS
    Bhaskaran, M
    Sriram, S
    Reeves, GK
    Ravichandran, V
    Borase, VD
    Bhaskaran, S
    MICROELECTRONICS: DESIGN, TECHNOLOGY, AND PACKAGING II, 2006, 6035
  • [33] Analytical and Finite-Element Modeling of a Cross Kelvin Resistor Test Structure for Low Specific Contact Resistivity
    Holland, Anthony S.
    Reeves, Geoffrey K.
    Bhaskaran, Madhu
    Sriram, Sharath
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (10) : 2250 - 2254
  • [34] RESISTANCE OF ELASTICALLY DEFORMED SHALLOW P-N JUNCTIONS
    RINDNER, W
    JOURNAL OF APPLIED PHYSICS, 1962, 33 (08) : 2479 - +
  • [35] Microswitch Lifecycle Test Fixture for Simultaneously Measuring Contact Resistance (Rc) and Contact Force (Fc) in Controlled Ambient Environments
    Edelmann, Thomas A.
    Coutu, Ronald A., Jr.
    PROCEEDINGS OF THE FIFTY-SIXTH IEEE HOLM CONFERENCE ON ELECTRICAL CONTACTS, 2010, : 309 - 316
  • [36] COMPARISON OF ALUMINUM SILICON CONTACT RESISTANCE VALUES OBTAINED BY CONTACT CHAIN AND KELVIN MEASUREMENT STRUCTURES
    MAZER, JA
    LINHOLM, LW
    PRAMANIK, D
    TSAI, S
    SAXENA, AN
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (08) : C325 - C325
  • [37] NOVEL SELF-ALIGNED W/TIN/TISI2 CONTACT STRUCTURE FOR VERY SHALLOW JUNCTIONS AND INTERCONNECTIONS
    JOSHI, RV
    MOY, D
    BRODSKY, S
    CHARAI, A
    KRUSINELBAUM, L
    RESTLE, PJ
    NGUYEN, TN
    OH, CS
    APPLIED PHYSICS LETTERS, 1989, 54 (17) : 1672 - 1674
  • [38] THE CONTACT TEST - A METHOD OF MEASURING SPERMICIDAL ACTION
    DAVIDSON, HA
    LANCET, 1953, 265 (AUG29): : 432 - 434
  • [39] ALUMINUM-SILICON OHMIC CONTACT ON SHALLOW N+-P JUNCTIONS
    FINETTI, M
    OSTOJA, P
    SOLMI, S
    SONCINI, G
    SOLID-STATE ELECTRONICS, 1980, 23 (03) : 255 - &
  • [40] GENERALIZED TECHNIQUE FOR MEASURING SPECIFIC CONTACT RESISTANCE
    MEIER, DL
    RAICHOUDHURY, P
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : C99 - C99
12345