Accurate prediction of large-signal harmonic distortion in gallium nitride HEMTs

被引：2

作者：

Rodenbeck, C. T. ^{[1
]}

Follmann, R.

机构：

[1] Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA

[2] IMST GmbH, D-47475 Kamp, Lintfort, Germany

来源：

ELECTRONICS LETTERS | 2007年 / 43卷 / 10期

关键词：

D O I：

10.1049/el:20070911

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A nonlinear device modelling methodology capable of accurately predicting large-signal harmonic distortion in gallium nitride (GaN) HEMTs is presented. Harmonic balance simulation predicts the correct load target for maximum output power, with good agreement between measured and simulated load-pull data at 8 GHz. Fundamental output power at 8 GHz as well as second- and third-order harmonic distortion products at 16 and 24 GHz, respectively, are precisely predicted into 10 dB compression for a 2 W 150 pm GaN transistor.

引用

页码：590 / 592

页数：3

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