Accurate prediction of large-signal harmonic distortion in gallium nitride HEMTs

被引：2
|
作者：
Rodenbeck, C. T. [1 ]
Follmann, R.
机构：
[1] Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA
[2] IMST GmbH, D-47475 Kamp, Lintfort, Germany
来源：
ELECTRONICS LETTERS | 2007年 / 43卷 / 10期
关键词：
D O I：
10.1049/el:20070911
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A nonlinear device modelling methodology capable of accurately predicting large-signal harmonic distortion in gallium nitride (GaN) HEMTs is presented. Harmonic balance simulation predicts the correct load target for maximum output power, with good agreement between measured and simulated load-pull data at 8 GHz. Fundamental output power at 8 GHz as well as second- and third-order harmonic distortion products at 16 and 24 GHz, respectively, are precisely predicted into 10 dB compression for a 2 W 150 pm GaN transistor.
引用
收藏
页码：590 / 592
页数：3
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