Large-signal modeling of microwave gallium nitride-based HFETs

被引：0
|
作者：
Drozdovski, NV [1 ]
Caverly, RH [1 ]
Quinn, MJ [1 ]
机构：
[1] Villanova Univ, ECE Dept, Villanova, PA 19085 USA
来源：
APMC 2001: ASIA-PACIFIC MICROWAVE CONFERENCE, VOLS 1-3, PROCEEDINGS | 2001年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes the large-signal model of the heterojunction field-effect transistors (HFET) based on AlxGa1-xN/GaN heterostucture used as control components for high-power microwave and RF control devices (switches, attenuators, phase-shifters, etc.). Its use should extend power level of FET-based RF and microwave.
引用
收藏
页码：248 / 251
页数：2
相关论文
共 50 条
  • [1] LARGE-SIGNAL MODELING AND SIMULATION OF GAAS-MESFETS AND HFETS
    SLEDZIK, H
    WOLFF, I
    [J]. INTERNATIONAL JOURNAL OF MICROWAVE AND MILLIMETER-WAVE COMPUTER-AIDED ENGINEERING, 1992, 2 (01): : 49 - 60
  • [2] Gallium nitride-based microwave and RF control devices
    Caverly, RH
    Drozdovski, NV
    Quinn, MJ
    [J]. MICROWAVE JOURNAL, 2001, 44 (02) : 112 - +
  • [3] Gallium nitride-based microwave and RF control devices
    [J]. 1600, Horizon House (44):
  • [4] Nitride-based HFETs with carrier confinement layers
    Su, YK
    Chang, SJ
    Kuan, TM
    Ko, CH
    Webb, JB
    Lan, WH
    Cherng, YT
    Chen, SC
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2004, 110 (02): : 172 - 176
  • [5] Accurate prediction of large-signal harmonic distortion in gallium nitride HEMTs
    Rodenbeck, C. T.
    Follmann, R.
    [J]. ELECTRONICS LETTERS, 2007, 43 (10) : 590 - 592
  • [6] Tunable gallium nitride-based devices for ultrafast signal processing
    Xie, Peng
    Wen, Yu
    Yang, Wenqiang
    Wan, Zishen
    Liu, Jiarui
    Wang, Xinyu
    Da, Siqi
    Wang, Yishan
    [J]. MODERN PHYSICS LETTERS B, 2019, 33 (17):
  • [7] Symmetrical Large-Signal Modeling of Microwave Switch FETs
    Prasad, Ankur
    Fager, Christian
    Thorsell, Mattias
    Andersson, Christer M.
    Yhland, Klas
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2014, 62 (08) : 1590 - 1598
  • [8] Gallium Nitride-Based Heterostructures on Silicon Substrates for Powerful Microwave Transistors
    Ezubchenko, I. S.
    Chernykh, M. Y.
    Andreev, A. A.
    Grishchenko, J. V.
    Chernykh, I. A.
    Zanaveskin, M. L.
    [J]. NANOTECHNOLOGIES IN RUSSIA, 2019, 14 (7-8): : 385 - 388
  • [9] Advances in gallium nitride-based electronics
    Adesida, I.
    Kumar, V.
    [J]. EDSSC: 2007 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, VOLS 1 AND 2, PROCEEDINGS, 2007, : 1 - 6
  • [10] Design, modeling and optimization of gallium nitride-based photonic crystal structures
    Ptasinski, Konrad
    Lis, Szymon
    Wielichowski, Marcin
    Patela, Sergiusz
    [J]. PHOTONIC CRYSTAL MATERIALS AND DEVICES IX, 2010, 7713
12345