Mechanism analysis of gate-induced drain leakage in off-state n-MOSFET

被引：2

作者：

Huang, L ^{[1
]}

Lai, PT ^{[1
]}

Xu, JP ^{[1
]}

Cheng, YC ^{[1
]}

机构：

[1] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong

来源：

1997 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS | 1997年

关键词：

D O I：

10.1109/HKEDM.1997.642340

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An analytical expression for gate-induced drain leakage (GIDL) current based on indirect tunneling theory is described, which can be used for both band-to-band and band-trap-band tunnelings. The voltage and temperature dependence of GIDL and hot-carrier-induced drain leakage are investigated. Experiment shows that interface traps participate in the conduction of GIDL and indirect band-trap-band tunneling could be a major mechanism responsible far GIDL.

引用

页码：94 / 97

页数：4

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