INTERFACE-TRAP ENHANCED GATE-INDUCED LEAKAGE CURRENT IN MOSFET

被引：71
|
作者：
CHEN, IC [1 ]
TENG, CW [1 ]
COLEMAN, DJ [1 ]
NISHIMURA, A [1 ]
机构：
[1] TEXAS INSTRUMENTS JAPAN LTD,VLSI DEV,MIHO 30004,JAPAN
来源：
IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 05期
关键词：
D O I：
10.1109/55.31725
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
下载
收藏
页码：216 / 218
页数：3
相关论文
共 50 条
  • [1] INTERFACE-TRAP EFFECT ON GATE INDUCED DRAIN LEAKAGE CURRENT IN SUBMICRON N-MOSFETS
    WANG, TH
    HUANG, CM
    CHANG, TE
    CHOU, JW
    CHANG, CY
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (12) : 2475 - 2477
  • [2] Gate-induced drain leakage current enhanced by plasma charging damage
    Ma, SG
    Zhang, YH
    Li, MF
    Li, WD
    Xie, J
    Sheng, GTT
    Yen, AC
    Wang, JLF
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (05) : 1006 - 1008
  • [3] Comparison of gate-induced drain leakage and charge pumping measurements for determining lateral interface trap profiles in electrically stressed MOSFET's
    Okhonin, S
    Hessler, T
    Dutoit, M
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (04) : 605 - 612
  • [4] Comparison of gate-induced drain leakage and charge pumping measurements for determining lateral interface trap profiles in electrically stressed MOSFET's
    Swiss Federal Inst of Technology, Lausanne, Switzerland
    IEEE Trans Electron Devices, 4 (605-612):
  • [5] GATE-INDUCED DRAIN LEAKAGE CURRENT IN MOS DEVICES
    NATHAN, V
    DAS, NC
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (10) : 1888 - 1890
  • [6] Extraction of Distance Between Interface Trap and Oxide Trap from Random Telegraph Noise in Gate-Induced Drain Leakage
    Seo, Youngsoo
    Yoo, Sungwon
    Shin, Joonha
    Kim, Hyunsoo
    Kim, Hyunsuk
    Jeon, Sangbin
    Shin, Hyungcheol
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2016, 16 (05) : 5247 - 5251
  • [7] Analysis of a novel elevated source drain MOSFET with-induced gate-induced drain-leakage current
    Kim, KW
    Choi, CS
    Choi, WY
    2000 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS, 2000, : 36 - 39
  • [8] The influence of gate-induced drain leakage current by DC-stress on p-MOSFET scaling
    Bae, JC
    Lee, YJ
    1996 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS, 1996, : 87 - 90
  • [9] Band-to-Band Tunneling by Monte Carlo Simulation for Prediction of MOSFET Gate-Induced Drain Leakage Current
    Kan E.C.
    Narayanan V.
    Pei G.
    Journal of Computational Electronics, 2002, 1 (1-2) : 223 - 226
  • [10] Investigation of bulk traps enhanced gate-induced leakage current in Hf-based MOSFETs
    Liao, J. C.
    Fang, Yean-Kuen
    Hou, Y. T.
    Tseng, W. H.
    Hsu, P. F.
    Lin, K. C.
    Huang, K. T.
    Lee, T. L.
    Liang, M. S.
    IEEE ELECTRON DEVICE LETTERS, 2008, 29 (05) : 509 - 511
12345