INTERFACE-TRAP ENHANCED GATE-INDUCED LEAKAGE CURRENT IN MOSFET

被引：71
|
作者：
CHEN, IC [1 ]
TENG, CW [1 ]
COLEMAN, DJ [1 ]
NISHIMURA, A [1 ]
机构：
[1] TEXAS INSTRUMENTS JAPAN LTD,VLSI DEV,MIHO 30004,JAPAN
来源：
IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 05期
关键词：
D O I：
10.1109/55.31725
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：216 / 218
页数：3
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