CHARACTERIZATION OF MG-DOPED INGAN AND INALN ALLOYS GROWN BY MBE FOR SOLAR APPLICATIONS

被引：0
|
作者：
Chen, X. [1 ]
Matthews, K. D. [1 ]
Hao, D. [1 ]
Schaff, W. J. [1 ]
Eastman, L. F. [1 ]
Walukiewicz, W. [2 ]
Ager, J. W. [2 ]
Yu, K. M. [2 ]
机构：
[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA
[2] Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA
来源：
PVSC: 2008 33RD IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-4 | 2008年
关键词：
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
InxGa1-xN and InxAl1-xN alloys are grown via MBE on sapphire substrates. A hole concentration of 7.7x10(17) cm(-3) is achieved on Mg-doped In0.04Ga0.96N. When x>0.11, the Hall samples exhibit strong n-type polarity, whereas p-type polarity is confirmed by hot probe measurement for all Mg-doped InGaN and InAIN samples. Single p-i-n junction solar cells made of the same InxGa1-xN alloy composition are developed. Upon illumination by a 325 nm laser, V-oc is measured at 2.5 V with a fill factor of 61% for all-GaN cell. Clear photo-responses are also observed in InGaN cells with 0.2 and 0.3 Indium content when illuminated by focused outdoor sunlight.
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页码：122 / +
页数：3
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