CHARACTERIZATION OF MG-DOPED INGAN AND INALN ALLOYS GROWN BY MBE FOR SOLAR APPLICATIONS

被引：0

作者：

Chen, X. ^{[1
]}

Matthews, K. D. ^{[1
]}

Hao, D. ^{[1
]}

Schaff, W. J. ^{[1
]}

Eastman, L. F. ^{[1
]}

Walukiewicz, W. ^{[2
]}

Ager, J. W. ^{[2
]}

Yu, K. M. ^{[2
]}

机构：

[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA

[2] Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA

来源：

PVSC: 2008 33RD IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-4 | 2008年

关键词：

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

InxGa1-xN and InxAl1-xN alloys are grown via MBE on sapphire substrates. A hole concentration of 7.7x10(17) cm(-3) is achieved on Mg-doped In0.04Ga0.96N. When x>0.11, the Hall samples exhibit strong n-type polarity, whereas p-type polarity is confirmed by hot probe measurement for all Mg-doped InGaN and InAIN samples. Single p-i-n junction solar cells made of the same InxGa1-xN alloy composition are developed. Upon illumination by a 325 nm laser, V-oc is measured at 2.5 V with a fill factor of 61% for all-GaN cell. Clear photo-responses are also observed in InGaN cells with 0.2 and 0.3 Indium content when illuminated by focused outdoor sunlight.

引用

页码：122 / +

页数：3

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