Characterization of AlGaN, Te-doped GaN and mg-doped GaN grown by hydride vapor phase epitaxy

被引：2

作者：

Jang, K. S. ^{[1
]}

Kim, K. H. ^{[1
]}

Hwang, S. L. ^{[1
]}

Jeon, H. S. ^{[1
]}

Ahn, H. S. ^{[1
]}

Yang, M. ^{[1
]}

Choi, W. J. ^{[1
]}

Kim, S. W. ^{[2
]}

Honda, Y. ^{[3
]}

Yamaguchi, M. ^{[3
]}

Sawaki, N. ^{[3
]}

Yoo, J. ^{[4
]}

Lee, S. M. ^{[4
]}

Koike, M. ^{[4
]}

机构：

[1] Korea Maritime Univ, Dept Appl Sci, Pusan 606791, South Korea

[2] Andong Natl Univ, Dept Phys, Andong 760749, South Korea

[3] Nagoya Univ, Dept Electron, Nagoya, Aichi 4648603, Japan

[4] Samsung ElectroMech Co Ltd, Gyunggi, South Korea

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 1 | 2007年 / 4卷 / 01期

关键词：

D O I：

10.1002/pssc.200673506

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The AlxGa1-xN, Te-doped GaN and Mg-doped GaN layers on GaN/A1(2)O(3) substrates are grown by mixed-source hydride vapor phase epitaxy (HVPE) method. The metallic Ga mixed with Al is used as group Ill source material to get the AlxGa1-xN layers. The values of the compositions x of the AI(x)Ga(1-x)N layers characterized by X-ray diffraction (XRD) measurements are 0.6 % similar to 80 % at the various temperatures of the source zone. The metallic Ga mixed with Te (or Mg) is used as source material for n-type (or p-type) doping. The electron concentrations of the Te-doped GaN layers are varied from 1.8 X 10(17) to 8.3 x 10(18)/cm(3). The hole concentrations of the Mg-doped GaN layers are varied from 1.5 x 10(16) to 3.2 x 10(16)/cm(3). We find that the mixed-source HVPE method is suitable to get a thick AlGaN layer with an arbitrary composition, a Te-doped GaN layer with a high n-type concentration and a Mg-doped GaN layer with p-type concentration.

引用

页码：133 / +

页数：2

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[1] Electrical characterization of Mg-doped GaN grown by metalorganic vapor phase epitaxy
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[J]. APPLIED PHYSICS LETTERS, 1996, 68 (17) : 2392 - 2394
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Nagai, H
Zhu, QS
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[J]. APPLIED PHYSICS LETTERS, 1998, 73 (14) : 2024 - 2026
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Pan, YC
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Ubukata, A
Yano, Y
Yamaguchi, A
Akutsu, N
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Matsumoto, K
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[6] Characterization of Mg-doped GaN grown by metalorganic chemical vapor deposition
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Youn, DH
Fareed, RSQ
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Goto, S
Takeya, M
Ikeda, M
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[8] Characterization of Mg-doped AlInN grown by metalorganic vapor phase epitaxy
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HIRAMATSU, K
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AKASAKI, I
[J]. JOURNAL OF CRYSTAL GROWTH, 1994, 145 (1-4) : 192 - 196
[10] Characterization of Mg-doped GaN
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Hao, Y
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[J]. ACTA PHYSICA SINICA, 2004, 53 (02) : 626 - 630

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