Effect of Gate Oxide Defects on Tunnel Transistor RF Performance

被引：0
|
作者：
Hellenbrand, M. [1 ]
Memisevic, E. [1 ]
Svensson, J. [1 ]
Krishnaraja, A. [1 ]
Lind, E. [1 ]
Wernersson, L. -E. [1 ]
机构：
[1] Lund Univ, Dept Elect & Informat Technol, Ole Romers Vag 3, S-22363 Lund, Sweden
来源：
2018 76TH DEVICE RESEARCH CONFERENCE (DRC) | 2018年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页数：2
相关论文
共 50 条
  • [41] Dual Workfunction Hetero Gate Dielectric Tunnel Field-Effect Transistor Performance Analysis
    Yadav, Dharmendra Singh
    Sharma, Dheeraj
    Raad, Bhagwan Ram
    Bajaj, Varun
    PROCEEDINGS OF 2016 INTERNATIONAL CONFERENCE ON ADVANCED COMMUNICATION CONTROL AND COMPUTING TECHNOLOGIES (ICACCCT), 2016, : 26 - 29
  • [42] Design and analysis of dual-gate misalignment on the performance of dopingless tunnel field effect transistor
    Shekhar, Deep
    Raman, Ashish
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2020, 126 (06):
  • [43] Design and analysis of dual-gate misalignment on the performance of dopingless tunnel field effect transistor
    Deep Shekhar
    Ashish Raman
    Applied Physics A, 2020, 126
  • [44] Performance Analysis of HfO2-SiO2 Stacked Oxide Quadruple Gate Tunnel Field Effect Transistor for Improved ON Current
    M. Sathishkumar
    T. S. Arun Samuel
    P. Vimala
    D. Nirmal
    Silicon, 2022, 14 : 6003 - 6008
  • [45] Analogue/RF performance attributes of underlap tunnel field effect transistor for low power applications
    Vijayvargiya, V.
    Reniwal, B. S.
    Singh, P.
    Vishvakarma, S. K.
    ELECTRONICS LETTERS, 2016, 52 (07) : 559 - U71
  • [46] Enhancing Frequency Performance of Underlap Tunnel Field-Effect Transistor for Analog/RF Applications
    Gupta, Shikhar
    Nandi, Ashutosh
    JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2019, 14 (05) : 716 - 722
  • [47] Dual material gate junctionless tunnel field effect transistor
    Punyasloka Bal
    Bahniman Ghosh
    Partha Mondal
    M. W. Akram
    Ball Mukund Mani Tripathi
    Journal of Computational Electronics, 2014, 13 : 230 - 234
  • [48] Performance Analysis of HfO2-SiO2 Stacked Oxide Quadruple Gate Tunnel Field Effect Transistor for Improved ON Current
    Sathishkumar, M.
    Samuel, T. S. Arun
    Vimala, P.
    Nirmal, D.
    SILICON, 2022, 14 (11) : 6003 - 6008
  • [49] Dual material gate junctionless tunnel field effect transistor
    Bal, Punyasloka
    Ghosh, Bahniman
    Mondal, Partha
    Akram, M. W.
    Tripathi, Ball Mukund Mani
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2014, 13 (01) : 230 - 234
  • [50] Graphene Based Tunnel Field Effect Transistor for RF Applications
    Vijh, Manjula
    Gupta, R. S.
    Pandey, Sujata
    2019 PHOTONICS & ELECTROMAGNETICS RESEARCH SYMPOSIUM - SPRING (PIERS-SPRING), 2019, : 256 - 259
12345