Effect of Gate Oxide Defects on Tunnel Transistor RF Performance

被引：0
|
作者：
Hellenbrand, M. [1 ]
Memisevic, E. [1 ]
Svensson, J. [1 ]
Krishnaraja, A. [1 ]
Lind, E. [1 ]
Wernersson, L. -E. [1 ]
机构：
[1] Lund Univ, Dept Elect & Informat Technol, Ole Romers Vag 3, S-22363 Lund, Sweden
来源：
2018 76TH DEVICE RESEARCH CONFERENCE (DRC) | 2018年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页数：2
相关论文
共 50 条
  • [31] RF and Stability Performance of Double Gate Tunnel FET
    Sivasankaran, K.
    Mallick, P. S.
    Murali, N.
    Kumar, Kiran
    2012 INTERNATIONAL CONFERENCE ON EMERGING ELECTRONICS (ICEE), 2012,
  • [32] Enhancing the RF performance at the nanoscale using double gate ferroelectric field effect transistor
    Kumar, Avinash
    Raj, Balwinder
    PHYSICA SCRIPTA, 2025, 100 (03)
  • [33] Extended gate with source splitted tunnel field effect transistor for improved device performance
    Dutta, Ritam
    Subash, T. D.
    Paitya, Nitai
    MATERIALS TODAY-PROCEEDINGS, 2021, 43 : 3715 - 3719
  • [34] Performance analysis of InGaAs/GaAsP heterojunction double gate tunnel field effect transistor
    Ahish, S.
    Sharma, Dheeraj
    Vasantha, M. H.
    Kumar, Y. B. N.
    SUPERLATTICES AND MICROSTRUCTURES, 2017, 103 : 93 - 101
  • [35] A high performance gate engineered charge plasma based tunnel field effect transistor
    Bashir, Faisal
    Loan, Sajad A.
    Rafat, M.
    Alamoud, Abdul Rehman M.
    Abbasi, Shuja A.
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2015, 14 (02) : 477 - 485
  • [36] Design and Performance Analysis of Gate Overlap Dual Material Tunnel Field Effect Transistor
    Buttol, S.
    Balaji, B.
    INTERNATIONAL JOURNAL OF ENGINEERING, 2024, 37 (09): : 1773 - 1779
  • [37] A high performance gate engineered charge plasma based tunnel field effect transistor
    Faisal Bashir
    Sajad A. Loan
    M. Rafat
    Abdul Rehman M. Alamoud
    Shuja A. Abbasi
    Journal of Computational Electronics, 2015, 14 : 477 - 485
  • [38] Design and Performance Analysis of Gate Overlap Dual Material Tunnel Field Effect Transistor
    Buttol S.
    Balaji B.
    International Journal of Engineering, Transactions B: Applications, 2024, 37 (09): : 1773 - 1779
  • [39] Effect of High-k Oxide on Double Gate Transistor Embedded in RF Colpitts Oscillator
    Bella, M.
    Latreche, S.
    Gontrand, C.
    JOURNAL OF NANO- AND ELECTRONIC PHYSICS, 2016, 8 (04)
  • [40] Performance analysis of asymmetric dielectric modulated dual short gate tunnel field effect transistor
    Pon, Adhithan
    Carmel, A. Santhia
    Bhattacharyya, A.
    Ramesh, R.
    SUPERLATTICES AND MICROSTRUCTURES, 2018, 113 : 608 - 615
12345