Novel structures of 3.3kV 4H-SiC BJTs to reduce the Stacking Faults expansion

被引：0
|
作者：
Brosselard, P. [1 ]
Tournier, D. [1 ]
Banu, V. [2 ]
Jorda, X. [2 ]
Godignon, P. [2 ]
Millan, J. [2 ]
Bano, E. [3 ]
机构：
[1] Inst Natl Sci Appl, Lab AMPERE, 20 Av Albert Einstein, F-69621 Villeurbanne, France
[2] CSIC, Ctr Nacl Microelect, E-08193 Barcelona, Spain
[3] ENSERG, IMEP, F-08193 Grenoble, France
来源：
2009 21ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2009年
关键词：
D O I：
10.1109/ISPSD.2009.5158055
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
4H-SiC BJTs have been manufactured on a Norstel epitaxied N+/P/N-/N+ substrate with a combination of mesa and JTE as edge termination. A breakdown voltage of 3.3 kV has been measured at 1 mu A regardless the active area (0.16 and 1.4 mm(2)). A current gain of 20 was extracted at 10V-25 degrees C. 70% of the BJTs did not exhibit a current shift, after a 50 hours DC-stress (25 degrees C).
引用
收藏
页码：275 / +
页数：2
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