AlInAsSb Separate Absorption, Charge, and Multiplication Avalanche Photodiodes

被引：0
|
作者：
Ren, Min [1 ]
Maddox, Scott J. [2 ]
Woodson, Madison E. [1 ]
Chen, Yaojia [1 ]
Bank, Seth R. [2 ]
Campbell, Joe C. [1 ]
机构：
[1] Univ Virginia, Dept Elect & Comp Engn, Charlottesville, VA 22904 USA
[2] Univ Texas Austin, Microelect Res Ctr, Austin, TX 78758 USA
来源：
2016 IEEE PHOTONICS CONFERENCE (IPC) | 2016年
关键词：
Photodiodes; Avalanche photodiodes; Photodetectors; Telecommunication; Fiber optics links and subsystems;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report AlxIn1-xAsySb1-y-based separate absorption, charge, and multiplication avalanche photodiodes (APDs) that operate in the short-wavelength infrared spectrum. These APDs exhibit low excess noise factor, corresponding to k = 0.01, and low dark current.
引用
收藏
页码：258 / 259
页数：2
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