AlInAsSb Separate Absorption, Charge, and Multiplication Avalanche Photodiodes

被引：0

作者：

Ren, Min ^{[1
]}

Maddox, Scott J. ^{[2
]}

Woodson, Madison E. ^{[1
]}

Chen, Yaojia ^{[1
]}

Bank, Seth R. ^{[2
]}

Campbell, Joe C. ^{[1
]}

机构：

[1] Univ Virginia, Dept Elect & Comp Engn, Charlottesville, VA 22904 USA

[2] Univ Texas Austin, Microelect Res Ctr, Austin, TX 78758 USA

来源：

2016 IEEE PHOTONICS CONFERENCE (IPC) | 2016年

关键词：

Photodiodes; Avalanche photodiodes; Photodetectors; Telecommunication; Fiber optics links and subsystems;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report AlxIn1-xAsySb1-y-based separate absorption, charge, and multiplication avalanche photodiodes (APDs) that operate in the short-wavelength infrared spectrum. These APDs exhibit low excess noise factor, corresponding to k = 0.01, and low dark current.

引用

页码：258 / 259

页数：2

共 50 条

[21] Excess noise analysis of separate absorption multiplication region superlattice avalanche photodiodes
Shih, NF
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (06) : 1075 - 1081
[22] Reliability of InGaAs/InP based separate absorption grading multiplication avalanche photodiodes
Centro Studi e Laboratori, Telecomunicazioni , Torino, Italy
Microelectron Reliab, 7-8 (973-1000):
[23] Reliability of InGaAs/InP based separate absorption grading multiplication avalanche photodiodes
Montangero, P
Azzini, GA
Neitzert, HC
Ricci, G
Serra, L
MICROELECTRONICS RELIABILITY, 1996, 36 (7-8) : 973 - 1000
[24] Aluminum Gallium Nitride/Silicon Carbide Separate Absorption and Multiplication Avalanche Photodiodes
Rodak, L. E.
Sampath, A. V.
Gallinat, C. S.
Enck, R. W.
Smith, J.
Shen, H.
Wraback, M.
Chen, Y.
Zhou, Q.
Campbell, J. C.
2012 LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES (LEC), 2012,
[25] Stark Effect on InP-InGaAs Separate Absorption and Multiplication Avalanche Photodiodes
Aadit, Muhammad Navid Anjum
Khan, Ummay Sumaya
2016 5TH INTERNATIONAL CONFERENCE ON INFORMATICS, ELECTRONICS AND VISION (ICIEV), 2016, : 703 - 707
[26] Ultraviolet separate absorption and multiplication 4H-SiC avalanche photodiodes
Guo, XY
Rowland, LB
Dunne, GT
Fronheiser, JA
Sandvik, PM
Beck, AL
Campbell, JC
2005 IEEE LEOS Annual Meeting Conference Proceedings (LEOS), 2005, : 372 - 373
[27] Proton-Implantation-Isolated Separate Absorption Charge and Multiplication 4H-SiC Avalanche Photodiodes
Zhou, Qiugui
McIntosh, Dion
Liu, Han-Din
Campbell, Joe C.
IEEE PHOTONICS TECHNOLOGY LETTERS, 2011, 23 (05) : 299 - 301
[28] TEMPERATURE-DEPENDENCE OF BREAKDOWN VOLTAGES IN SEPARATE ABSORPTION, GRADING, CHARGE, AND MULTIPLICATION INP/INGAAS AVALANCHE PHOTODIODES
MA, CLF
DEEN, MJ
TAROF, LE
YU, JCH
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (05) : 810 - 818
[29] TEMPERATURE-MEASUREMENTS OF SEPARATE ABSORPTION, GRADING, CHARGE, AND MULTIPLICATION (SAGCM) INP/INGAAS AVALANCHE PHOTODIODES (APDS)
TAROF, LE
YU, J
BAIRD, T
BRUCE, R
KNIGHT, DG
IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (09) : 1044 - 1046
[30] Low-frequency noise in single growth planar separate absorption, grading, charge, and multiplication avalanche photodiodes
An, S
Deen, MJ
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (03) : 537 - 543

← 1 2 3 4 5 →