AlInAsSb Separate Absorption, Charge, and Multiplication Avalanche Photodiodes

被引：0

作者：

Ren, Min ^{[1
]}

Maddox, Scott J. ^{[2
]}

Woodson, Madison E. ^{[1
]}

Chen, Yaojia ^{[1
]}

Bank, Seth R. ^{[2
]}

Campbell, Joe C. ^{[1
]}

机构：

[1] Univ Virginia, Dept Elect & Comp Engn, Charlottesville, VA 22904 USA

[2] Univ Texas Austin, Microelect Res Ctr, Austin, TX 78758 USA

来源：

2016 IEEE PHOTONICS CONFERENCE (IPC) | 2016年

关键词：

Photodiodes; Avalanche photodiodes; Photodetectors; Telecommunication; Fiber optics links and subsystems;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report AlxIn1-xAsySb1-y-based separate absorption, charge, and multiplication avalanche photodiodes (APDs) that operate in the short-wavelength infrared spectrum. These APDs exhibit low excess noise factor, corresponding to k = 0.01, and low dark current.

引用

页码：258 / 259

页数：2

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