A 2-22 GHz CMOS wideband distributed power amplifier

被引：0

作者：

Zhang, Ying ^{[1
,2
]}

Ma, Kaixue ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, Sch Phys Elect, Chengdu, Sichuan, Peoples R China

[2] Nanjing Univ Posts & Telecommun, Natl & Local Joint Engn Lab Radio Frequency Integ, Nanjing, Jiangsu, Peoples R China

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2017年 / 59卷 / 12期

基金：

中国博士后科学基金; 中国国家自然科学基金;

关键词：

artificial transmission line; distributed amplifier; large-signal; multigated transistor; power added efficiency;

D O I：

10.1002/mop.30881

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article presents a novel wideband distributed power amplifier (DPA) implemented in a 0.18 m CMOS technology. The DPA consists of a preamplifier and a medium-power power amplifier (PA), and both of them are respectively composed of two distributed amplifiers (DAs), which have separate input artificial transmission lines (ATLs) but with their output ATLs shared to achieve wide frequency band. In the medium-power PA, the large-signal multigated transistor technology is applied to further improve the linear output power. Measurement results show that the DPA achieves 10.2 dB average associated gain from 2.5 to 22 GHz. The output power at 1-dB output compression point (OP1dB) is more than 8 dBm over the frequency of 2-22 GHz, and the peak OP1dB is 12.6 dBm with the power-added efficiency of 7.2% at 6 GHz.

引用

页码：3107 / 3111

页数：5

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