A Performance Study of 22nm FDSOI CMOS for Wideband 5G Power Amplifier Applications

被引：0
|
作者：
Quang Huy Le [1 ,2 ]
Dang Khoa Huynh [1 ,2 ]
Nayak, Anurag [1 ]
Kaempfe, Thomas [1 ]
Rudolph, Matthias [2 ]
机构：
[1] Fraunhofer IPMS, Ctr Nanoelect Technol, Dresden, Germany
[2] Brandenburg Tech Univ Cottbus, Ulrich L Rohde Chair Radio Frequency & Microwave, Cottbus, Germany
来源：
PROCEEDINGS OF THE 2022 14TH GERMAN MICROWAVE CONFERENCE (GEMIC) | 2022年
关键词：
22nm; 5G NR; FDSOI; power amplifier; BROAD-BAND; TRANSFORMER;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a performance study of the 22nm FDSOI transistor through the design and simulation of a wideband two-stage power amplifier (PA). The PA design flow includes preliminary characterization and modeling of the core active device. The matching networks are designed through 3D electromagnetic (EM) simulation by using Ansys HFSS. The proposed PA is well matched to the 50-Omega system impedance and covers the 5G New Radio (NR) FR1 and FR2 frequency bands with a moderate small-signal gain of 16 +/- 1.5 dB. The PA delivers 12 +/- 0.2 dBm output power from 12 GHz to 32 GHz with a 3-dB bandwidth of 42 GHz. Moreover, the power-added efficiency (PAE) is maintained above 30% in the 5G FR2 bands and reaches a maximum value of 40%.
引用
收藏
页码：61 / 64
页数：4
相关论文
共 50 条
  • [1] A 1:4 Active Power Divider for 5G Phased-Array Transmitters in 22nm CMOS FDSOI
    Elsayed, Nourhan
    Saleh, Hani
    Mustapha, Ademola
    Mohammad, Baker
    Sanduleanu, Mihai
    [J]. 2021 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2021,
  • [2] A Ku-Band Power Amplifier in 22nm FDSOI
    Haag, Alexander
    Ulusoy, Ahmet Cagri
    [J]. 2024 IEEE 24TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, SIRF, 2024, : 1 - 4
  • [3] Low Power and High Linear, Low Noise Amplifier Designed in 22nm FDSOI Technology for 5G Wireless Systems
    Mollaalipouramir, Marzieh
    Buisman, Koen
    Fager, Christian
    Zirath, Herbert
    [J]. 2023 ASIA-PACIFIC MICROWAVE CONFERENCE, APMC, 2023, : 778 - 780
  • [4] A 28GHz, Asymmetrical, Modified Doherty Power Amplifier, in 22nm FDSOI CMOS
    Elsayed, Nourhan
    Saleh, Hani
    Mohammad, Baker
    Sanduleanu, Mihai
    [J]. 2020 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2020,
  • [5] Doherty Power Amplifier in 28 nm CMOS for 5G Applications
    Hamed, Ahmed
    Aref, Ahmed
    Saeed, Mohamed
    Negra, Renato
    [J]. 2018 11TH GERMAN MICROWAVE CONFERENCE (GEMIC 2018), 2018, : 191 - 194
  • [6] Design of a Linearized Power-Efficient Dynamic Amplifier in 22nm FDSOI
    Yang, Bangda
    Carusone, Anthony Chan
    [J]. 2024 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, ISCAS 2024, 2024,
  • [7] A Millimeter-Wave Concurrent LNA in 22-nm CMOS FDSOI for 5G Applications
    Fu, Jierui
    Bardeh, Mohammad Ghaedi
    Paramesh, Jeyanandh
    Entesari, Kamran
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2023, 71 (03) : 1031 - 1043
  • [8] Wideband Low Noise Amplifiers for mm-Wave 5G Application using Capacitive Feedback Technique in 22nm FDSOI
    Mustapha, Ademola Akeem
    Gaya, Sagiru
    Mohammad, Baker
    Abou-Khousa, Mohamed A.
    [J]. 2021 28TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS, AND SYSTEMS (IEEE ICECS 2021), 2021,
  • [9] Effective AM-PM Cancellation with Body Bias for 5G CMOS Power Amplifier Design in 22nm FD-SOI
    Mayeda, Jill C.
    Tsay, Jerry
    Lie, Donald Y. C.
    Lopez, Jerry
    [J]. 2019 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2019,
  • [10] A PAE-Controlled Wideband Power Amplifier for Sub-6GHz 5G Applications in 28nm FDSOI Technology
    Queheille, Remi
    Fellmann, Maxandre
    Deval, Yann
    Kerherve, Eric
    Rivet, Francois
    Deltimple, Nathalie
    [J]. 2022 29TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS (IEEE ICECS 2022), 2022,
12345