A 2-22 GHz CMOS wideband distributed power amplifier

被引：0
|
作者：
Zhang, Ying [1 ,2 ]
Ma, Kaixue [1 ]
机构：
[1] Univ Elect Sci & Technol China, Sch Phys Elect, Chengdu, Sichuan, Peoples R China
[2] Nanjing Univ Posts & Telecommun, Natl & Local Joint Engn Lab Radio Frequency Integ, Nanjing, Jiangsu, Peoples R China
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2017年 / 59卷 / 12期
基金：
中国博士后科学基金; 中国国家自然科学基金;
关键词：
artificial transmission line; distributed amplifier; large-signal; multigated transistor; power added efficiency;
D O I：
10.1002/mop.30881
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This article presents a novel wideband distributed power amplifier (DPA) implemented in a 0.18 m CMOS technology. The DPA consists of a preamplifier and a medium-power power amplifier (PA), and both of them are respectively composed of two distributed amplifiers (DAs), which have separate input artificial transmission lines (ATLs) but with their output ATLs shared to achieve wide frequency band. In the medium-power PA, the large-signal multigated transistor technology is applied to further improve the linear output power. Measurement results show that the DPA achieves 10.2 dB average associated gain from 2.5 to 22 GHz. The output power at 1-dB output compression point (OP1dB) is more than 8 dBm over the frequency of 2-22 GHz, and the peak OP1dB is 12.6 dBm with the power-added efficiency of 7.2% at 6 GHz.
引用
收藏
页码：3107 / 3111
页数：5
相关论文
共 50 条
  • [31] A W-band CMOS Low power Wideband Low Noise Amplifier With 22 dB Gain and 3dB bandwidth of 20 GHz
    Lee, Chae Jun
    Lee, Hae Jin
    Lee, Joong Geun
    Jang, Tae Hwang
    Park, Chul Soon
    2015 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC), VOLS 1-3, 2015,
  • [32] Design and Implementation of Wideband Stacked Distributed Power Amplifier in 0.13-μm CMOS Using Uniform Distributed Topology
    Tarar, Mohsin M.
    Negra, Renato
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2017, 65 (12) : 5212 - 5222
  • [33] A 60 GHz 24.5 dBm Wideband Distributed Active Transformer Power Amplifier on 250 nm BiCMOS
    Leufker, Jan Dirk
    Carta, Corrado
    Ellinger, Frank
    2015 GERMAN MICROWAVE CONFERENCE, 2015, : 139 - 141
  • [34] A 28GHz, Asymmetrical, Modified Doherty Power Amplifier, in 22nm FDSOI CMOS
    Elsayed, Nourhan
    Saleh, Hani
    Mohammad, Baker
    Sanduleanu, Mihai
    2020 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2020,
  • [35] A Low Power 3.1-10.6 GHz Ultra-wideband CMOS Power Amplifier with Resistive Shunt Feedback Technique
    Sapawi, R.
    Sahari, S. K.
    Kipli, Kuryati
    2013 INTERNATIONAL CONFERENCE ON ADVANCED COMPUTER SCIENCE APPLICATIONS AND TECHNOLOGIES (ACSAT), 2014, : 172 - 175
  • [36] A 0.1-14 GHz wideband SiGeBiFET power amplifier
    Park, J
    Ma, PX
    Racanelli, M
    Ma, ZQ
    2006 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS, 2006, : 159 - +
  • [37] WIDEBAND TRANSISTOR AMPLIFIER 1 GHZ WITH HIGH POWER OUTPUT
    LUTTICH, F
    INTERNATIONALE ELEKTRONISCHE RUNDSCHAU, 1970, 24 (04): : 105 - &
  • [38] Comparison of CMOS Power Amplifier Topologies For a Wideband Doherty Architecture
    Vasjanov, Aleksandr
    Barzdenas, Vaidotas
    2017 OPEN CONFERENCE OF ELECTRICAL, ELECTRONIC AND INFORMATION SCIENCES (ESTREAM), 2017,
  • [39] A 204-234.5-GHz Wideband Amplifier in 65-nm CMOS
    Qi, Hao
    Wen, Jincai
    An, Donggang
    Wang, Xun
    2019 PHOTONICS & ELECTROMAGNETICS RESEARCH SYMPOSIUM - FALL (PIERS - FALL), 2019, : 3000 - 3004
  • [40] A 26 to 40 GHz Wideband Feedback Amplifier Using 0.18 μm CMOS
    Liao, Huan
    Domier, Calvin W.
    Luhmann, Neville C., Jr.
    2011 36TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), 2011,
12345