A W-band CMOS Low power Wideband Low Noise Amplifier With 22 dB Gain and 3dB bandwidth of 20 GHz

This paper presents a W-band low power, wideband low noise amplifier design in 65nm CMOS. Low noise amplifier consists of six-stage to obtain high gain. For a high-data rate communication system, the wideband characteristic is very important. In order to enhance the 3 dB bandwidth, a two-center frequency technique is used. In addition, the amplifier was realized by a conjugate matching technique to achieve low-loss between each stage. The measured results show that the LNA can provide a gain of 22dB with a 3 dB bandwidth of 20 GHz. The LNA consumes 21 mW from a 1 V supply voltage, achieving S11 better than 10 dB for frequencies 67 over 110 GHz, S22 better than 10 dB for frequencies 69-102 GHz. Furthermore, the LNA achieves minimum noise figure (NF) of 6.8 dB at 81 GHz and NF of 6.8-40.4 dB within a 3 dB gain bandwidth.