Use of sublimation epitaxy for obtaining volume 3C-SiC crystals

被引：0

作者：

Lebedev, A. A. ^{[1
]}

Abramov, P. L. ^{[1
]}

Zubrilov, A. S. ^{[1
]}

Bogdanova, E. V. ^{[1
]}

Lebedev, S. P. ^{[1
]}

Seredova, N. V. ^{[1
]}

Tregubova, A. S. ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2010年 / 36卷 / 06期

关键词：

SILICON-CARBIDE; SINGLE-CRYSTALS; GROWTH;

D O I：

10.1134/S1063785010060258

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is demonstrated that polytype-homogeneous, thick (> 100 mu m) epitaxial 3C-SiC layers of good structural quality with diameters of no less than 25 mm can be grown on 6H-SiC substrates by sublimation epitaxy in vacuum. These layers can be used as seeds for growing volume 3C-SiC crystals by the modified Lely method.

引用

页码：574 / 576

页数：3

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