Use of sublimation epitaxy for obtaining volume 3C-SiC crystals

被引：0

作者：

Lebedev, A. A. ^{[1
]}

Abramov, P. L. ^{[1
]}

Zubrilov, A. S. ^{[1
]}

Bogdanova, E. V. ^{[1
]}

Lebedev, S. P. ^{[1
]}

Seredova, N. V. ^{[1
]}

Tregubova, A. S. ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2010年 / 36卷 / 06期

关键词：

SILICON-CARBIDE; SINGLE-CRYSTALS; GROWTH;

D O I：

10.1134/S1063785010060258

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is demonstrated that polytype-homogeneous, thick (> 100 mu m) epitaxial 3C-SiC layers of good structural quality with diameters of no less than 25 mm can be grown on 6H-SiC substrates by sublimation epitaxy in vacuum. These layers can be used as seeds for growing volume 3C-SiC crystals by the modified Lely method.

引用

页码：574 / 576

页数：3

共 50 条

[31] Fabrication of quasi-superlattices at the interface between 3C-SiC epitaxial layer and substrates of hexagonal SiC polytypes by sublimation epitaxy in vacuum
A. A. Lebedev
S. Yu. Davydov
L. M. Sorokin
L. V. Shakhov
Technical Physics Letters, 2015, 41 : 1156 - 1158
[32] Characterization of 3C-SiC/6H-SiC heterostructures grown by vacuum sublimation
Savkina, NS
Strel'chuk, AM
Sorokin, LM
Mosina, GN
Tregubova, AS
Solov'ev, VV
Lebedev, AA
SILICON CARBIDE AND RELATED MATERIALS - 2002, 2002, 433-4 : 293 - 296
[33] XPS and XRD study of crystalline 3C-SiC grown by sublimation method
Iwanowski, RJ
Fronc, K
Paszkowicz, W
Heinonen, M
JOURNAL OF ALLOYS AND COMPOUNDS, 1999, 286 (1-2) : 143 - 147
[34] Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (100) seeding layers
Schuh, P.
Schoeler, M.
Wilhelm, M.
Syvajarvi, M.
Litrico, G.
La Via, F.
Mauceri, M.
Wellmann, P. J.
JOURNAL OF CRYSTAL GROWTH, 2017, 478 : 159 - 162
[35] Selective epitaxy and lateral overgrowth of 3C-SiC on Si - A review
Gupta, A
Jacob, C
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 2005, 51 (1-3) : 43 - 69
[36] Characterization of 3C-SiC epilayers grown on 6H-SiC substrates by vacuum sublimation
Savkina, N
Tregubova, A
Scheglov, M
Solov'ev, V
Volkova, A
Lebedev, A
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 91 : 317 - 320
[37] Laser micro machining of 3C-SiC single crystals
Zoppel, S
Farsari, M
Merz, R
Zehetner, J
Stangl, G
Reider, GA
Fotakis, C
MICROELECTRONIC ENGINEERING, 2006, 83 (4-9) : 1400 - 1402
[38] On the stability of 3C-SiC single crystals at high temperatures
Dompoint, D.
Galben-Sandulache, I. G.
Boulle, A.
Chaussende, D.
Eyidi, D.
Demenet, J. -L.
Beaufort, M. -F.
Rabier, J.
SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, 717-720 : 493 - +
[39] 6H-3C SiC structures grown by sublimation epitaxy
Lebedev, AA
Savkina, NS
Strelchuk, AM
Tregubova, AS
Scheglov, MP
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 46 (1-3): : 168 - 170
[40] Electrical Characterization of p-type 3C-SiC Epilayers Grown on n-type 6H-SiC by means of Sublimation Epitaxy
Tsirimpis, A.
Krieger, M.
Pensl, G.
Beshkova, M.
Syvajarvi, M.
Yakimova, R.
2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES, 2010, 1292 : 87 - +

← 1 2 3 4 5 →