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Vacuum sublimation growth: 6H-SiC ''site-competition'' epitaxy and study of 3C-SiC epitaxial layers grown on 6H-SiC substrates

被引：0
|
作者：
Andreev, AN
Smirnova, NY
Scheglov, MP
Tregubova, AS
Rastegaev, VP
Chelnokov, VE
机构：
来源：
SILICON CARBIDE AND RELATED MATERIALS 1995 | 1996年 / 142卷
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暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A dependence of 6H-SiC epi layers doping level on silicon vapour pressure in the growth cell have been studied during vacuum sublimation growth. The obtained dependence can be explained by a ''site-competition'' model based on different position of donors and accepters in the SiC crystal lattice. 3C-SiC epi layers with 4-5 mm(2) double position twins and low defect density (<10(2),cm(2)) have been grown on 6H-SiC substrates. The 3C-SiC/6H-SiC structures were grown without damaged intermediate layers at the interface.
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页码：105 / 108
页数：4
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