Vacuum sublimation growth: 6H-SiC ''site-competition'' epitaxy and study of 3C-SiC epitaxial layers grown on 6H-SiC substrates

A dependence of 6H-SiC epi layers doping level on silicon vapour pressure in the growth cell have been studied during vacuum sublimation growth. The obtained dependence can be explained by a ''site-competition'' model based on different position of donors and accepters in the SiC crystal lattice. 3C-SiC epi layers with 4-5 mm(2) double position twins and low defect density (<10(2),cm(2)) have been grown on 6H-SiC substrates. The 3C-SiC/6H-SiC structures were grown without damaged intermediate layers at the interface.