Characterization of p-n structures grown by sublimation heteroepitaxy of 3C-SiC on 6H-SiC

被引：10

作者：

Strel'chuk, AM ^{[1
]}

Savkina, NS ^{[1
]}

Kuznetsov, AN ^{[1
]}

Lebedev, AA ^{[1
]}

Tregubova, AS ^{[1
]}

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2002年 / 91卷

关键词：

p n homo and heterostructures; forward current; injection electroluminescence; SiC;

D O I：

10.1016/S0921-5107(01)01042-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A study on forward I-V characteristics of p-n structures grown by sublimation heteroepitaxy of 3C-SiC on 6H-SiC shows that about 90% of all the diodes can be placed in two groups. Current-voltage (I-V) characteristics of type I diodes are close to those of high-perfection p-n homostructures based on bulk 3C-SiC, with some indications of tunneling currents. I-V characteristics of type 11 diodes are close to those of p-n homostructures grown by epitaxial methods on single-crystal 6H-SiC substrates. Diodes of both types emit in the entire visible spectral range. The longer-wavelength emission is predominant in type I diodes, and shorter-wavelength emission in type 11 diodes. However, the main feature of the injection electroluminescence (IEL) is the qualitative similarity of the IEL spectra for diodes of both types. In particular, the IEL spectra of both diode types contain two bands (with hnu(max) approximate to 2.3 and 2.9 eV), attributed to free exciton annihilation in 3C-SiC and 6H-SiC, respectively. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：321 / 324

页数：4

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