Observation and Analysis of Bit-by-Bit Cell Current Variation During Data-Retention of TaOx-based ReRAM

被引：0
|
作者：
Maeda, Kazuki [1 ]
Matsuda, Shinpei [1 ]
Takeuchi, Ken [1 ]
Yasuhara, Ryutaro [2 ]
机构：
[1] Chuo Univ, Dept Elect Elect & Commun Engn, Tokyo 1128551, Japan
[2] Panasonic Semicond Solut Co Ltd, 1 Kotari Yakemachi, Kyoto 6178520, Japan
来源：
2018 48TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC) | 2018年
关键词：
ReRAM; Data-retention characteristics; MEMORY;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This work analyzes the bit-by-bit memory cell current variation during the data-retention to study the long time data-retention behavior of TaOx-based resistive random access memory (ReRAM). For the first time, the current variation during data-retention is observed and analyzed for each memory cell of ReRAM. Cell current of low resistance state (LRS) cells shows complicated characteristics, that is, decreasing in the long term and fluctuating in the short term due to oxygen vacancy diffusion. On the other hand, high resistance state cell hardly shifts during the data-retention. A physical model for LRS cell current fluctuation is proposed in this study, based on the numerical calculation.
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页码：46 / 49
页数：4
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