Performance assessment of 4H-SiC bipolar junction transistors and insulated gate bipolar transistors

被引：1

作者：

Balachandran, S. ^{[1
]}

Chow, T. P.

Agarwal, A.

机构：

[1] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Ctr Integrated Elect, Troy, NY 12180 USA

[2] Cree Inc, Durham, NC 27703 USA

来源：

Silicon Carbide and Related Materials 2005, Pts 1 and 2 | 2006年 / 527-529卷

关键词：

Bipolar Junction Transistor; Insulated Gate Bipolar Transistor; 4H-SiC; power dissipation; figure of merit;

D O I：

10.4028/www.scientific.net/MSF.527-529.1433

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The performance prospects for 4H-SiC Bipolar Junction Transistors (BJTs) and Insulated Gate Bipolar Transistors (IGBTs) are theoretically evaluated. The total power dissipated (P-total) for both devices is calculated as a function of lifetime in the drift region and blocking voltage and used as a figure of merit to compare and contrast the effectiveness of different semiconductor materials for bipolar device applications. Assuming a maximum of 300 W/cm(2) for the total permissible power dissipation due to heat sink constraints we estimate an upper limit of 5kV for SiC BJT operation.

引用

页码：1433 / 1436

页数：4

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