4kV 4H-SiC epitaxial emitter bipolar junction transistors

被引：0
|
作者：
Balachandran, S [1 ]
Chow, TP [1 ]
Agarwal, A [1 ]
Scozzie, C [1 ]
Jones, KA [1 ]
机构：
[1] Rensselaer Polytech Inst, Ctr Integrated Elect, Troy, NY 12180 USA
来源：
PROCEEDINGS OF THE 17TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2005年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper we present 4H-SiC BJTs with open-base blocking voltage (BVCEO) of 4000V (the upper limit for 4H-SiC BJT operation), specific on-resistance (R-on,R-sp) of 56 m Omega-cm(2) , and common-emitter current gain beta similar to 9. These devices are designed with interdigitated base and emitter fingers with multiple emitter stripes. We assess the impact of design (emitter stripe width and contact spacing) on device performance and also examine the effect of emitter contact resistance on the device forward conduction characteristics.
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页码：291 / 294
页数：4
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