Performance assessment of 4H-SiC bipolar junction transistors and insulated gate bipolar transistors

被引：1
|
作者：
Balachandran, S. [1 ]
Chow, T. P.
Agarwal, A.
机构：
[1] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Ctr Integrated Elect, Troy, NY 12180 USA
[2] Cree Inc, Durham, NC 27703 USA
来源：
Silicon Carbide and Related Materials 2005, Pts 1 and 2 | 2006年 / 527-529卷
关键词：
Bipolar Junction Transistor; Insulated Gate Bipolar Transistor; 4H-SiC; power dissipation; figure of merit;
D O I：
10.4028/www.scientific.net/MSF.527-529.1433
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The performance prospects for 4H-SiC Bipolar Junction Transistors (BJTs) and Insulated Gate Bipolar Transistors (IGBTs) are theoretically evaluated. The total power dissipated (P-total) for both devices is calculated as a function of lifetime in the drift region and blocking voltage and used as a figure of merit to compare and contrast the effectiveness of different semiconductor materials for bipolar device applications. Assuming a maximum of 300 W/cm(2) for the total permissible power dissipation due to heat sink constraints we estimate an upper limit of 5kV for SiC BJT operation.
引用
收藏
页码：1433 / 1436
页数：4
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