Fabrication and Tunable Dielectric Properties of Magnesium-Doped Lead Barium Zirconate Thin Films

被引：7
|
作者：
Hao, Xihong [1 ,2 ]
Zhai, Jiwei [1 ]
Ren, Huiping [2 ]
Song, Xiwen [2 ]
Yang, Jichun [2 ]
机构：
[1] Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China
[2] Inner Mongolia Univ Sci & Technol, Sch Met & Mat, Baotou 014010, Peoples R China
来源：
JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2010年 / 93卷 / 03期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1111/j.1551-2916.2009.03487.x
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In present work, (Pb0.50Ba0.50)ZrO3 (PBZ) thin films doped by Mg from 0 to 5 mol% were deposited on Pt(111)/TiO2/SiO2/Si substrates by the sol-gel method. The phase structure of the Mg-doped PBZ thin films were characterized by X-ray diffraction. The electric-field and temperature-dependent electrical properties of the Mg-doped PBZ thin films were also investigated in detail. It was found that the Mg content had a strong influence on the dielectric properties of the thin films. The maximum values of dielectric permittivity and dielectric loss were obtained with 1 mol% Mg-doping PBZ thin films. However, the figure of merit (FOM) of the films was improved with increase in the Mg content.
引用
收藏
页码：646 / 649
页数：4
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