Biasing N-channel GaAs MESFETs

被引：0

作者：

Bonn, F ^{[1
]}

机构：

[1] Motorola SPS, Wireless Infrastruct Syst Div, Tempe, AZ USA

来源：

MICROWAVES & RF | 2000年 / 39卷 / 09期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

THIS article discusses the basic problem of DC-current stabilization in n-channel, metal-semiconductor field-effect transistors (MESFETs) due to device-threshold variations. It introduces basic methods of V-th compensation through gate- and source-voltage control, analyzes several methods of compensation, and discusses their relative merits.

引用

页码：81 / +

页数：9

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