REDUCTION OF THE SHORT-CHANNEL EFFECTS FOR GAAS-MESFETS BY DOUBLE SHALLOW N+-LAYERS

被引：5
|
作者：
ENOKI, T
SUGITANI, S
YAMASAKI, K
OHWADA, K
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 09期
关键词：
D O I：
10.1109/55.6948
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：470 / 472
页数：3
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