Biasing N-channel GaAs MESFETs

被引：0
|
作者：
Bonn, F [1 ]
机构：
[1] Motorola SPS, Wireless Infrastruct Syst Div, Tempe, AZ USA
来源：
MICROWAVES & RF | 2000年 / 39卷 / 09期
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
THIS article discusses the basic problem of DC-current stabilization in n-channel, metal-semiconductor field-effect transistors (MESFETs) due to device-threshold variations. It introduces basic methods of V-th compensation through gate- and source-voltage control, analyzes several methods of compensation, and discusses their relative merits.
引用
收藏
页码：81 / +
页数：9
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