Deep level transient spectroscopy characterization of defects introduced in p-Si by electron beam deposition and proton irradiation

A study of defects introduced during metalisation by electron beam deposition (EBD) process and those introduced by MeV proton irradiation of boron doped p-type Cz grown silicon is presented. We have observed the following hole traps at, 0.32 +/- 0.01 eV and 0.54 +/- 0.01 eV above the valence band, induced during EBD processing of Titanium/Molybdenum (Ti/Mo) Schottky contacts on our samples. The annealing studies further revealed hole traps at, 0.15 +/- 0.02, 0.23 +/- 0.01, 0.38 +/- 0.01 and 0.59 +/- 0.01 eV each above the valence band. After all the defects were annealed out, the sample was irradiated with 2 MeV protons at room temperature and two primary hole traps, 0.15 eV and 0.32 eV were observed. The complete defect structure was then obtained by studying the defect annealing behaviour as well as the depth profiles of the defects.