Deep level transient spectroscopy analysis of 10 MeV proton and 1 MeV electron irradiation-induced defects in p-InGaP and InGaP-based solar cells

被引：0
|
作者：
Khan, Aurangzeb [1 ,5 ]
Yamaguchi, Masafumi [2 ]
Dharmaso, Nothaj [3 ]
Bourgoin, Jacques [4 ]
Ando, Koshi [2 ]
Takamoto, Tatsuya [1 ]
机构：
[1] Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
[2] Laboratoire des Milieux Desordonnes et Heterogenes,Universite, Pierre et Marie Curie, CNRS, UMR 7603, Tour 22, Case 86, 4 place Jussieu, 75252 Paris Cedex 05, France
[3] Department of Electrical and Electronic Engineering, Tottori University, Koyama, Tottori 680, Japan
[4] Central Research Laboratory, Japan Energy Corporation, 3-17-35 Niizo-Minami, Toda 335, Japan
[5] Department of Electrical Engineering, Ohio State University, 2015 Neil Avenue, Columbus, OH 43210, United States
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2002年 / 41卷 / 3 A期
关键词：
D O I：
10.1143/jjap.41.1241
中图分类号：
学科分类号：
摘要：
15
引用
收藏
页码：1241 / 1246
相关论文
共 22 条
  • [1] Deep level transient spectroscopy analysis of 10 MeV proton and 1 MeV electron irradiation-induced defects in p-InGaP and InGaP-based solar cells
    Khan, A
    Yamaguchi, M
    Dharmaso, N
    Bourgoin, J
    Ando, K
    Takamoto, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (3A): : 1241 - 1246
  • [2] Thermal annealing study of 1 MeV electron-irradiation-induced defects in n+p InGaP diodes and solar cells
    Khan, A
    Yamaguchi, M
    Bourgoin, JC
    Takamoto, T
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (04) : 2391 - 2397
  • [3] Deep-level transient spectroscopy analysis of proton-irradiated n+/p InGaP solar cells
    Dharmarasu, N
    Yamaguchi, M
    Khan, A
    Takamoto, T
    Ohshima, T
    Itoh, H
    Imaizumi, M
    Matsuda, S
    PHYSICA B-CONDENSED MATTER, 2001, 308 : 1181 - 1184
  • [4] Carrier removal in lattice-mismatched InGaP solar cells under 1-MeV-electron irradiation
    Ekins-Daukes, NJ
    Lee, HS
    Sasaki, T
    Yamaguchi, M
    Khan, A
    Takamoto, T
    Agui, T
    Kamimura, K
    Kaneiwa, M
    Imaizumi, M
    Ohshima, T
    Kamiya, T
    APPLIED PHYSICS LETTERS, 2004, 85 (13) : 2511 - 2513
  • [5] Majority- and minority-carrier deep level traps in proton-irradiated n+/p-InGaP space solar cells
    Dharmarasu, N
    Yamaguchi, M
    Bourgoin, JC
    Takamoto, T
    Ohshima, T
    Itoh, H
    Imaizumi, M
    Matsuda, S
    APPLIED PHYSICS LETTERS, 2002, 81 (01) : 64 - 66
  • [6] Deep level transient spectroscopy (DLTS) study of defects introduced in antimony doped Ge by 2 MeV proton irradiation
    Nyamhere, C.
    Das, A. G. M.
    Auret, F. D.
    Chawanda, A.
    Pineda-Vargas, C. A.
    Venter, A.
    PHYSICA B-CONDENSED MATTER, 2011, 406 (15-16) : 3056 - 3059
  • [7] Defect analysis of 1-MeV electron irradiated flexible InGaAs solar cells by deep-level transient spectroscopy and photoluminescence
    Wang, Z. X.
    Liu, M. Q.
    Wang, T. B.
    Zhang, S. Y.
    Li, M.
    Tang, G. H.
    Zhuang, Y.
    Yang, X.
    Zhong, L.
    Aierken, A.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2024, 171
  • [8] Comparison between deep level defects in GaAs induced by gamma, 1 MeV electron, and neutron irradiation
    J Appl Phys, 6 (3686):
  • [9] Deep-level transient spectroscopy studies of silicon detectors after 24 GeV proton irradiation and 1 MeV neutron irradiation
    Ahmed, M
    Watts, SJ
    Matheson, J
    Holmes-Siedle, A
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2001, 457 (03): : 588 - 594
  • [10] Deep-level defects introduced by 1 MeV electron radiation in AlInGaP for multijunction space solar cells
    Lee, H.S. (semilee@toyota-ti.ac.jp), 1600, American Institute of Physics Inc. (98):
123