Deep-level transient spectroscopy analysis of proton-irradiated n+/p InGaP solar cells

被引：7
|
作者：
Dharmarasu, N
Yamaguchi, M
Khan, A
Takamoto, T
Ohshima, T
Itoh, H
Imaizumi, M
Matsuda, S
机构：
[1] Toyota Technol Inst, Semicond Lab, Tempa Ku, Nagoya, Aichi 4688511, Japan
[2] Japan Energy Corp, Toda, Saitama 3358502, Japan
[3] Japan Atom Energy Res Inst, Takasaki, Gumma 3701292, Japan
[4] Natl Space Dev Agcy Japan, Tsukuba, Ibaraki 3058505, Japan
来源：
PHYSICA B-CONDENSED MATTER | 2001年 / 308卷
关键词：
InGaP; radiation; deep level defects;
D O I：
10.1016/S0921-4526(01)00935-8
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Defects in p-InGaP produced by low-energy protons have beer) investigated by deep-level transient spectroscopy (DLTS). A new majority-carrier (hole) trap HPl has been observed in low-energy proton-irradiated p-InGaP at 0.90+/-0.05eV above the valance band for the first time. The HPl introduction rate for 100-keV proton-irradiated p-InGaP is 1500cm(-1), which is 6 times higher than that (260cm(-1)) for the 380-keV proton-irradiated one. Isochronal annealing is found to annihilate the proton-induced HPl defect above 300degreesC that is higher than the annealing stage (100degreesC) for 1-MeV electron-induced H2 center in p-InGaP. The carrier removal rates are found to be 61433 and 8640cm(-1) for 100 and 380-keV proton irradiation, respectively. Proton energy-dependent effects include decrease in both the carrier removal rate and in the defect introduction rate with increase in proton energy by creating HPl trap. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：1181 / 1184
页数：4
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