Deep level transient spectroscopy analysis of 10 MeV proton and 1 MeV electron irradiation-induced defects in p-InGaP and InGaP-based solar cells

被引:0
|
作者
Khan, Aurangzeb [1 ,5 ]
Yamaguchi, Masafumi [2 ]
Dharmaso, Nothaj [3 ]
Bourgoin, Jacques [4 ]
Ando, Koshi [2 ]
Takamoto, Tatsuya [1 ]
机构
[1] Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
[2] Laboratoire des Milieux Desordonnes et Heterogenes,Universite, Pierre et Marie Curie, CNRS, UMR 7603, Tour 22, Case 86, 4 place Jussieu, 75252 Paris Cedex 05, France
[3] Department of Electrical and Electronic Engineering, Tottori University, Koyama, Tottori 680, Japan
[4] Central Research Laboratory, Japan Energy Corporation, 3-17-35 Niizo-Minami, Toda 335, Japan
[5] Department of Electrical Engineering, Ohio State University, 2015 Neil Avenue, Columbus, OH 43210, United States
关键词
D O I
10.1143/jjap.41.1241
中图分类号
学科分类号
摘要
15
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收藏
页码:1241 / 1246
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