A WDM-Compatible 4 x 32-Gb/s CMOS-Driven Electro-Absorption Modulator Array

被引：0
|
作者：
Lee, B. G. [1 ]
Rimolo-Donadio, R. [1 ]
Rylyakov, A. V. [1 ]
Proesel, J. [1 ]
Bulzacchelli, J. F. [1 ]
Baks, C. W. [1 ]
Meghelli, M. [1 ]
Schow, C. L. [1 ]
Ramaswamy, A. [2 ]
Roth, J. E. [2 ]
Shin, J. H. [2 ]
Koch, B. [2 ]
Sparacin, D. K. [2 ]
Fish, G. A. [2 ]
机构：
[1] IBM Res, TJ Watson Res Ctr, 1101 Kitchawan Rd, Yorktown Hts, NY 10598 USA
[2] Aurrion Inc, Goleta, CA 93117 USA
来源：
2015 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC) | 2015年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A four-channel electro-absorption-modulator array, driven by 32-nm CMOS drivers providing 2-V peak-to-peak output swing, operates with BER < 10(-12) at a data rate of 4 x 32 Gb/s and dissipates 170 mW of power.
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页数：3
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