A WDM-Compatible 4 x 32-Gb/s CMOS-Driven Electro-Absorption Modulator Array

被引：0

作者：

Lee, B. G. ^{[1
]}

Rimolo-Donadio, R. ^{[1
]}

Rylyakov, A. V. ^{[1
]}

Proesel, J. ^{[1
]}

Bulzacchelli, J. F. ^{[1
]}

Baks, C. W. ^{[1
]}

Meghelli, M. ^{[1
]}

Schow, C. L. ^{[1
]}

Ramaswamy, A. ^{[2
]}

Roth, J. E. ^{[2
]}

Shin, J. H. ^{[2
]}

Koch, B. ^{[2
]}

Sparacin, D. K. ^{[2
]}

Fish, G. A. ^{[2
]}

机构：

[1] IBM Res, TJ Watson Res Ctr, 1101 Kitchawan Rd, Yorktown Hts, NY 10598 USA

[2] Aurrion Inc, Goleta, CA 93117 USA

来源：

2015 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC) | 2015年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A four-channel electro-absorption-modulator array, driven by 32-nm CMOS drivers providing 2-V peak-to-peak output swing, operates with BER < 10(-12) at a data rate of 4 x 32 Gb/s and dissipates 170 mW of power.

引用

页数：3

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