4x100Gb/s PAM4 Multi-Channel Silicon Photonic Chipset With Hybrid Integration of III-V DFB Lasers and Electro-Absorption Modulators

被引：2

作者：

Levy, Jacob S. S. ^{[1
]}

Timurdogan, Erman ^{[1
]}

Kuo, Yu-Sheng ^{[1
]}

Lyu, Gap Youl ^{[1
]}

Tsai, Charles ^{[1
]}

Yan, Xuejin ^{[1
]}

Kim, Harqkyun ^{[1
]}

Stagarescu, Cristian

Meneou, Kevin ^{[1
]}

Thomas, Abu ^{[1
]}

Fragkos, Ioannis ^{[1
]}

Sitwell, Geoffrey ^{[1
]}

Trita, Andrea ^{[1
]}

Liu, Yangyang ^{[1
]}

Ziebel, Melissa ^{[1
]}

Byrd, Jerry ^{[1
]}

Steinbach, Sven ^{[2
]}

Chou, Bruce ^{[1
]}

Vis, William ^{[1
]}

Abed, Arin ^{[1
]}

Kwon, Young ^{[1
]}

Nykanen, Henri ^{[3
]}

Lo, Shih-Han ^{[2
]}

Ikonen, Janne ^{[2
]}

Larismaa, Juha ^{[3
]}

Drake, John ^{[2
]}

Benzoni, Albert ^{[1
]}

Minkenberg, Cyriel ^{[1
,2
]}

Schrans, Thomas ^{[1
]}

Rickman, Andrew ^{[2
]}

机构：

[1] Rockley Photon Inc, Pasadena, CA 91101 USA

[2] Rockley Photon Ltd, Newport NP10 8YJ, England

[3] Rockley Photon Oy, Espoo 02150, Finland

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 2023年 / 41卷 / 16期

关键词：

Silicon photonics; Datacenter; distributed feedback laser (DFB); Electro-absorption modulators (EAM); pulse-amplitdue modulation (PAM)-4; TRANSMISSION;

D O I：

10.1109/JLT.2023.3263069

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A silicon photonic based transmitter and receiver chipset for 4x106Gb/s 400 GBASE-DR4 data rates is presented. Each channel of the transmitter chip reaches high extinction ratio and optical modulation amplitude (OMA) with a low TDECQ penalty in full compliance with the IEEE standard. The receiver chips possess high responsivity with low polarization dependent loss. The use of discrete III-V arrayed components hybridized onto the silicon platform and passive alignment of single-mode fibers provides a low-cost, compact and scalable solution extendable to even higher aggregate rates and channel count.

引用

页码：5350 / 5358

页数：9

共 3 条

[1] 25Gb/s Error-free transmission with a packaged chipset integrating a III-V/SOI DFB laser an electro-absorption modulator and a semiconductor optical amplifier
Ghorbel, Ines
Gallet, Antonin
Shen, Alexandre
Carrara, David
Make, Dalila
Levaufre, Guillaume
Duan, Guang-Hua
Olivier, Segolene
Jany, Christophe
Malhouitre, Stephane
Kopp, Christophe
Eason, Cormac
O'Brien, Peter
2017 IEEE 14TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP), 2017, : 95 - 96
[2] 5 x 20 Gb/s heterogeneously integrated III-V on silicon electro-absorption modulator array with arrayed waveguide grating multiplexer
Fu, Xin
Cheng, Jianxin
Huang, Qiangsheng
Hu, Yingtao
Xie, Weiqiang
Tassaert, Martijn
Verbist, Jochem
Ma, Keqi
Zhang, Jianhao
Chen, Kaixuan
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Shi, Yaocheng
Bauwelinck, Johan
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Liu, Liu
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OPTICS EXPRESS, 2015, 23 (14): : 18686 - 18693
[3] 225 Gb/s PAM4 2 km and 10 km Transmission of Electro-Absorption Modulator Integrated Laser With Hybrid Waveguide Structure for 800 Gb/s and 1.6 Tb/s Transceivers
Uchiyama, Asami
Okuda, Shinya
Hokama, Yohei
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Yamauchi, Yasuhiro
JOURNAL OF LIGHTWAVE TECHNOLOGY, 2024, 42 (04) : 1225 - 1230

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