Fabrication and Testing of Solution-processed Carbon Nanotube Thin Film Transistor

被引：0

作者：

Yi, Xun ^{[1
]}

Fang, Liang ^{[1
]}

Chi, Yaqing ^{[1
]}

Sui, Bingcai ^{[1
]}

机构：

[1] Natl Univ Def Technol, Coll Comp, State Key Lab High Performance Comp, Changsha, Hunan, Peoples R China

来源：

2014 INTERNATIONAL CONFERENCE ON INFORMATION SCIENCE, ELECTRONICS AND ELECTRICAL ENGINEERING (ISEEE), VOLS 1-3 | 2014年

关键词：

Carbon Nanotube; Thin Film Transistor; Solution Process; Gate Leakage; NETWORKS; MOBILITY;

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

We described fabrication and testing of solutionprocessed SWCNT TFTs. A back-gated TFT test structure was fabricated by drop-coating SWCNT solution on SiO2 surface with Au electrodes. Output characteristic and switching characteristic were measured and analyzed. Over 4 decades' on/off ratio was obtained by using drop-coating at room temperature without any further optimization. Although we use a back-gated test structure, gate leak current was estimated at the level of picoampere. The resultant mobility level was 2x10(-3) cm(2) V(-1)s(-1), which is potential for future applications.

引用

页码：1170 / 1174

页数：5

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