Organic thin-film transistor from solution-processed precursor film

被引：0
|
作者：
Hattori, Reiji [1 ]
机构：
[1] Kyushu Univ, Dept Elect, Higashi Ku, Fukuoka 812, Japan
来源：
2007 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1-4 | 2007年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Small molecule, Tetrabenzoporphyrin (BP), organic thin-film-transistor (OTFT) were fabricated by annealing its spin-coated precursor film at 205 degrees C. The OUT has a bottom contacted structure with Polystyrene passivation layer. The transfer characteristics of the TFT provide a mobility of 0.11 cm(2)/(V.s) and an on/off ratio of more than 10(4).
引用
收藏
页码：840 / 841
页数：2
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