Solution-processed carbon nanotube thin-film complementary static random access memory

被引：0
|
作者：
Michael L. Geier
Julian J. McMorrow
Weichao Xu
Jian Zhu
Chris H. Kim
Tobin J. Marks
Mark C. Hersam
机构：
[1] Northwestern University,Department of Materials Science and Engineering
[2] University of Minnesota,Department of Electrical and Computer Engineering
[3] Northwestern University,Department of Chemistry
来源：
Nature Nanotechnology | 2015年 / 10卷
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学科分类号：
摘要：
Thin-film transistors made from solution-processed single-walled carbon nanotubes are used to fabricate large-scale integrated arrays of complementary static random access memory cells.
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收藏
页码：944 / 948
页数：4
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