Fabrication and Testing of Solution-processed Carbon Nanotube Thin Film Transistor

We described fabrication and testing of solutionprocessed SWCNT TFTs. A back-gated TFT test structure was fabricated by drop-coating SWCNT solution on SiO2 surface with Au electrodes. Output characteristic and switching characteristic were measured and analyzed. Over 4 decades' on/off ratio was obtained by using drop-coating at room temperature without any further optimization. Although we use a back-gated test structure, gate leak current was estimated at the level of picoampere. The resultant mobility level was 2x10(-3) cm(2) V(-1)s(-1), which is potential for future applications.