Processes and device technologies for AlGaN/GaN high electron mobility transistors

被引：0
|
作者：
Adesida, I. [1 ]
Kumar, V. [1 ]
Mohammed, F. [1 ]
Wang, L. [1 ]
Basu, A. [1 ]
Kim, D. -H. [1 ]
Lanford, W. [1 ]
机构：
[1] Univ Illinois, Dept Elect & Comp Engn, Micro & Nanotechnol Lab, Urbana, IL 61801 USA
来源：
2006 INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | 2006年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The AlInGaN-based high electron mobility transistor (HEMT) has proven to be the leading candidate for simultaneously realizing ultra-high frequency and ultra-high power amplifiers. The potential for these devices extends into operation in the mm-wave regime. Processes and device technologies that have resulted in these tremendous improvements are addressed.
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页码：140 / +
页数：2
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