Effect of AlGaN barrier thickness on the noise of AlGaN/GaN High electron mobility transistors

被引：0

作者：

Yahyazadeh, R. ^{[1
]}

Hashempour, Z. ^{[1
]}

机构：

[1] Islamic Azad Univ, Dept Phys, Khoy Branch 58135 175, Tehran, Iran

来源：

CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2011 (CSTIC 2011) | 2011年 / 34卷 / 01期

关键词：

D O I：

10.1149/1.3567561

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

An analytical-numerical model for the drain source and gate source currents of AlGaN/GaN based HEMTs has been developed that is capable to predict accurately the effects of AlGaN barrier thickness on the cut off frequency and noise in different gate source and drain source biases. Salient features of the model are incorporated of fully and partially occupied sub-bands in the interface quantum well, combined with a self-consistent solution of the Schrodinger and Poisson equations. In addition current in the barrier of AlGaN, traps density in AlGaN are also take in to account. The calculated model results are in very good agreement with existing experimental data for HEMTs device.

引用

页码：67 / 73

页数：7

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