Piezoeffect and gate current in AlGaN/GaN high electron mobility transistors

被引：46
|
作者：
Gaska, R [1 ]
Yang, JW
Osinsky, A
Bykhovski, AD
Shur, MS
机构：
[1] APA Opt Inc, Blaine, MN 55449 USA
[2] Univ Virginia, Dept Elect Engn, Charlottesville, VA 22903 USA
[3] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA
来源：
APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 25期
关键词：
D O I：
10.1063/1.120477
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on a high positive turn-on voltage (close to 2.5 V) of the gate-source leakage current in AlGaN/GaN high electron mobility transistors (HEMTs). The piezoeffect, the barrier, and channel doping result in the electron sheet concentration as high as 10(13) cm(-2). A larger conduction band discontinuity and a larger electron effective mass (compared to AlGaAs/GaAs HEMTs) lead to a lower gate current and to a higher turn-on voltage. This means that AlGaN/GaN technology can be suitable for applications in digital and mixed-mode integrated circuits. (C) 1997 American Institute of Physics. [S0003-6951(97)03451-7].
引用
收藏
页码：3673 / 3675
页数：3
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