Gate Voltage Contribution to Neutron-Induced SEB of Trench Gate Fieldstop IGBT

被引：11

作者：

Foro, L. L. ^{[1
]}

Touboul, A. D. ^{[1
]}

Michez, A. ^{[1
]}

Wrobel, F. ^{[1
]}

Rech, P. ^{[2
]}

Dilillo, L. ^{[3
]}

Frost, C. ^{[4
]}

Saigne, F. ^{[1
]}

机构：

[1] Univ Montpellier 2, CNRS UM2, IES UMR 5214, F-34095 Montpellier 5, France

[2] Univ Fed Rio Grande do Sul, BR-91501970 Porto Alegre, RS, Brazil

[3] Univ Montpellier 2, CNRS UM2, LIRMM UMR 5506, F-34095 Montpellier 5, France

[4] Rutherford Appleton Lab, ISIS, Sci & Technol Facil Council, Didcot OX11 0QX, Oxon, England

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2014年 / 61卷 / 04期

关键词：

Atmospheric neutrons; cross section; gate oxide breakdown; insulated gate bipolar transistor (IGBT); Single Event Burnout (SEB); Single Event Gate Rupture (SEGR); trench gate fieldstop; SINGLE-EVENT BURNOUT; POWER MOSFETS; RUPTURE; SEGR; MECHANISM; MODEL;

D O I：

10.1109/TNS.2014.2332813

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Single Event Burnout and Gate Rupture are catastrophic failures due to cosmic rays that can occur simultaneously. It is shown that negatively biasing the gate leads to a substantial increase of SEB cross section in particular when the collector voltage is closer to the safe operating area of the device.

引用

页码：1739 / 1746

页数：8

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