Influence of Temperature on Atmospheric Neutron-Induced SEB Failure Rate for SiC MOSFETs

被引：2
|
作者：
Peng, Chao [1 ]
Lei, Zhifeng [1 ]
Zhang, Zhangang [1 ]
He, Yujuan [1 ]
Ma, Teng [1 ]
Cai, Zongqi [1 ]
Chen, Yiqiang [1 ]
机构：
[1] China Elect Prod Reliabil & Environm Testing Res I, Sci & Technol Reliabil Phys & Applicat Elect Compo, Guangzhou 511370, Peoples R China
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2024年 / 71卷 / 02期
基金：
中国国家自然科学基金;
关键词：
SiC metal-oxide semiconductor field-effect transistor (MOSFET); single event burnout (SEB); spallation neutron source; temperature dependence; SINGLE-EVENT BURNOUT; IMPACT IONIZATION COEFFICIENTS; POWER MOSFETS;
D O I：
10.1109/TNS.2023.3348108
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The neutron-induced single event burnout (SEB) failure is investigated for SiC metal-oxide semiconductor field-effect transistor (MOSFET) by conducting spallation neutron irradiation at different temperatures in the range of -25 degrees C similar to 125 degrees C. The SEB failure rates of SiC MOSFETs at different temperatures and voltages are calculated based on the accelerated experimental results. It shows that the failure rates increase exponentially with drain bias voltages and decrease exponentially with temperatures. An empirical formula of failure rate as a function of voltage and temperature is established for the 900 V SiC MOSFET. The influence of temperature on SEB effect is also studied by technology computer aided design (TCAD) simulations.
引用
收藏
页码：160 / 166
页数：7
相关论文
共 50 条
  • [1] Neutron-Induced Failure Dependence on Reverse Gate Voltage for SiC Power MOSFETs in Atmospheric Environment
    Niskanen, K.
    Germanicus, R. Coq
    Michez, A.
    Wrobel, F.
    Boch, J.
    Saigne, F.
    Touboul, A. D.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 68 (08) : 1623 - 1632
  • [2] Neutron-Induced Failure in Silicon IGBTs, Silicon Super-Junction and SiC MOSFETs
    Griffoni, Alessio
    van Duivenbode, Jeroen
    Linten, Dimitri
    Simoen, Eddy
    Rech, Paolo
    Dilillo, Luigi
    Wrobel, Frederic
    Verbist, Patrick
    Groeseneken, Guido
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2012, 59 (04) : 866 - 871
  • [3] Estimating Terrestrial Neutron-Induced SEB Cross Sections and FIT Rates for High-Voltage SiC Power MOSFETs
    Ball, D. R.
    Sierawski, B. D.
    Galloway, K. F.
    Johnson, R. A.
    Alles, M. L.
    Sternberg, A. L.
    Witulski, A. F.
    Reed, R. A.
    Schrimpf, R. D.
    Javanainen, A.
    Lauenstein, J. -M.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 66 (01) : 337 - 343
  • [4] Terrestrial neutron induced failure rate measurement of SiC MOSFETs using China spallation neutron source
    Peng, Chao
    Lei, Zhifeng
    Zhang, Zhangang
    He, Yujuan
    Ma, Teng
    Huang, Yun
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2023, 540 : 129 - 135
  • [5] Analysis of neutron-induced single-event burnout in SiC power MOSFETs
    Shoji, Tomoyuki
    Nishida, Shuichi
    Hamada, Kimimori
    Tadano, Hiroshi
    MICROELECTRONICS RELIABILITY, 2015, 55 (9-10) : 1517 - 1521
  • [6] Tolerance Against Terrestrial Neutron-Induced Single-Event Burnout in SiC MOSFETs
    Asai, Hiroaki
    Nashiyama, Isamu
    Sugimoto, Kenji
    Shiba, Kensuke
    Sakaide, Yasuo
    Ishimaru, Yasuo
    Okazaki, Yuji
    Noguchi, Kenta
    Morimura, Tadaaki
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2014, 61 (06) : 3109 - 3114
  • [7] The impact of negative gate voltage on neutron-induced single event effects for SiC MOSFETs
    Wang, Haibin
    Nie, Zhichao
    Huang, Xiaofeng
    Gu, Jianghao
    Tan, Zhixin
    Jing, Hantao
    Mo, Lihua
    Hu, Zhiliang
    Wang, Xueming
    MICROELECTRONICS RELIABILITY, 2024, 163
  • [8] Gate Voltage Contribution to Neutron-Induced SEB of Trench Gate Fieldstop IGBT
    Foro, L. L.
    Touboul, A. D.
    Wrobel, F.
    Rech, P.
    Dilillo, L.
    Frost, C.
    Saigne, F.
    2013 14TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS), 2013,
  • [9] Gate Voltage Contribution to Neutron-Induced SEB of Trench Gate Fieldstop IGBT
    Foro, L. L.
    Touboul, A. D.
    Michez, A.
    Wrobel, F.
    Rech, P.
    Dilillo, L.
    Frost, C.
    Saigne, F.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2014, 61 (04) : 1739 - 1746
  • [10] High-Energy Proton and Atmospheric-Neutron Irradiations of SiC Power MOSFETs: SEB Study and Impact on Channel and Drift Resistances
    Martinella, C.
    Race, S.
    Stark, R.
    Alia, R. G.
    Javanainen, A.
    Grossner, U.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2023, 70 (08) : 1844 - 1851
12345