Influence of Temperature on Atmospheric Neutron-Induced SEB Failure Rate for SiC MOSFETs

被引：2
|
作者：
Peng, Chao [1 ]
Lei, Zhifeng [1 ]
Zhang, Zhangang [1 ]
He, Yujuan [1 ]
Ma, Teng [1 ]
Cai, Zongqi [1 ]
Chen, Yiqiang [1 ]
机构：
[1] China Elect Prod Reliabil & Environm Testing Res I, Sci & Technol Reliabil Phys & Applicat Elect Compo, Guangzhou 511370, Peoples R China
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2024年 / 71卷 / 02期
基金：
中国国家自然科学基金;
关键词：
SiC metal-oxide semiconductor field-effect transistor (MOSFET); single event burnout (SEB); spallation neutron source; temperature dependence; SINGLE-EVENT BURNOUT; IMPACT IONIZATION COEFFICIENTS; POWER MOSFETS;
D O I：
10.1109/TNS.2023.3348108
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The neutron-induced single event burnout (SEB) failure is investigated for SiC metal-oxide semiconductor field-effect transistor (MOSFET) by conducting spallation neutron irradiation at different temperatures in the range of -25 degrees C similar to 125 degrees C. The SEB failure rates of SiC MOSFETs at different temperatures and voltages are calculated based on the accelerated experimental results. It shows that the failure rates increase exponentially with drain bias voltages and decrease exponentially with temperatures. An empirical formula of failure rate as a function of voltage and temperature is established for the 900 V SiC MOSFET. The influence of temperature on SEB effect is also studied by technology computer aided design (TCAD) simulations.
引用
收藏
页码：160 / 166
页数：7
相关论文
共 50 条
  • [31] Investigation on temperature limitation and failure mechanism of SiC MOSFETs under avalanche conditions
    Fei, Haoyang
    Liang, Lin
    Zhang, Ziyang
    MICROELECTRONICS RELIABILITY, 2023, 150
  • [32] Atmospheric neutron-induced single event burnout characterization of 4.5 kV Si IGBTs with spallation neutron irradiation
    Peng, Chao
    Yang, Liu
    Lei, Zhifeng
    Zhou, Yuebin
    Ma, Teng
    Yuan, Zhiyong
    Zhang, Zhangang
    He, Yujuan
    Huang, Yun
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2024, 39 (08)
  • [33] Gate-level mitigation techniques for neutron-induced soft error rate
    Deogun, HS
    Sylvester, D
    Blaauw, D
    6th International Symposium on Quality Electronic Design, Proceedings, 2005, : 175 - 180
  • [34] Influence of fission modes on prompt neutron characteristics in the neutron-induced fission of 235U
    Talou, P.
    INTERNATIONAL CONFERENCE ON NUCLEAR DATA FOR SCIENCE AND TECHNOLOGY, VOL 1, PROCEEDINGS, 2008, : 317 - 320
  • [35] Bias and Temperature Dependence of Radiation-Induced Degradation for SiC MOSFETs
    Peng, Chao
    Lei, Zhifeng
    Zhang, Zhangang
    He, Yujuan
    Ma, Teng
    Chen, Yiqiang
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2024, 71 (05) : 1186 - 1193
  • [36] Impact of Nuclear Reaction Models on Neutron-Induced Soft Error Rate Analysis
    Abe, Shin-ichiro
    Ogata, Ryotaro
    Watanabe, Yukinobu
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2014, 61 (04) : 1806 - 1812
  • [37] Gate-oxide reliability and failure-rate reduction of industrial SiC MOSFETs
    Aichinger, T.
    Schmidt, M.
    2020 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2020,
  • [38] Experimental and simulation studies of neutron-induced single-event burnout in SiC power diodes
    Shoji, Tomoyuki
    Nishida, Shuichi
    Hamada, Kimimori
    Tadano, Hiroshi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (04)
  • [39] INFLUENCE OF NEUTRON-INDUCED CRYSTAL DEFECTS ON FLUORESCENCE DECAY TIMES OF ANTHRACENE AND STILBENE
    ROMER, M
    SHCNEIDE.H
    NUCLEAR INSTRUMENTS & METHODS, 1972, 100 (03): : 477 - +
  • [40] Influence of the rds,on temperature dependency of SiC MOSFETs on the optimal switching cell mechanical layout
    Papadopoulos, Georgios
    Biela, Jurgen
    2023 25TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS, EPE'23 ECCE EUROPE, 2023,
12345